Author Affiliations
Abstract
1 54th Institute, China Electronics Technology Group Corporation, Shijiazhuang 050011, China
2 Hebei Key Laboratory of Photonic Information Technology and Application (PITA), Shijiazhuang 050011, China
3 Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
We propose and demonstrate an integrated microwave photonic sideband selector based on the thin-film lithium niobate (TFLN) platform by integrating an electro-optic Mach–Zehnder modulator (MZM) and a thermo-optic tunable flat-top microring filter. The sideband selector has two functions: electro-optic modulation of wideband RF signal and sideband selection. The microwave photonic sideband selector supports processing RF signals up to 40 GHz, with undesired sidebands effectively suppressed by more than 25 dB. The demonstrated device shows great potential for TFLN integrated technology in microwave photonic applications, such as mixing and frequency measurement.
lithium niobate microwave photonics sideband selector Chinese Optics Letters
2024, 22(3): 031304
Author Affiliations
Abstract
1 Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
2 School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
Large-bandwidth, high-sensitivity, and large dynamic range electric field sensors are gradually replacing their traditional counterparts. The lithium-niobate-on-insulator (LNOI) material has emerged as an ideal platform for developing such devices, owing to its low optical loss, high electro-optical modulation efficiency, and significant bandwidth potential. In this paper, we propose and demonstrate an electric field sensor based on LNOI. The sensor consists of an asymmetric Mach–Zehnder interferometer (MZI) and a tapered dipole antenna array. The measured fiber-to-fiber loss is less than -6.7 dB, while the MZI structure exhibits an extinction ratio of greater than 20 dB. Moreover, 64-QAM signals at 2 GHz were measured, showing an error vector magnitude (EVM) of less than 8%.
thin-film lithium niobate electric field sensor QAM signal Chinese Optics Letters
2023, 21(12): 120041
1 华中科技大学 武汉光电国家研究中心, 武汉 430074
2 上海安湃芯研科技有限公司, 上海 201803
高速电光调制器是宽带光通信网络和微波光子系统中的关键元器件之一。相对于体材料铌酸锂而言, 薄膜铌酸锂材料由于其较强的光场限制能力, 在构建小尺寸、宽带、低半波电压的高性能电光调制芯片上有独特的优势。文章基于薄膜铌酸锂材料研制了一种3dB带宽不低于50GHz的电光调制芯片, 并采用光纤与波导水平端面耦合的光学封装方案和基于1.85mm同轴接头的射频封装方案, 实现了全封装的薄膜铌酸锂电光调制器。测量结果表明, 封装后器件的光学插入损耗小于等于5dB, 3dB带宽大于等于40GHz, 射频半波电压小于等于3V@1GHz。
微波光子学 薄膜铌酸锂 电光调制器 microwave photonics thin-film lithium niobate electro-optic modulators